本书为国外高校电子信息类优秀教材(英文影印版)之一。\r\n\r\n 本书在重点介绍射频电路设计理论的同时介绍其设计方法。主要内容有发射线路、Smith图、单点和多点网络、射频过滤设计、有源射频元件及模式、匹配和偏压网络、射频晶体管放大器设计以及振荡器和混频器等。\r\n\r\n 本书适用于高等院校通信、电子工程及相关专业的本科生,也可供一般工程技术人员参考。\r\n
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Preface \r\n\r\n Chapter 1. Introduction \r\n\r\n 1.1 Importance of Radio frequency Design \r\n\r\n 1.2 Dimensions and Units \r\n\r\n 1.3 Frequency Spectrum \r\n\r\n 1.4 RF Behavior of Passive Components \r\n\r\n 1.4.1 High-Frequency Resistors \r\n\r\n 1.4.2 High-Frequency Capacitors \r\n\r\n 1.4.3 High-Frequency Inductors \r\n\r\n 1.5 Chip Components and Circuit Board Considerations \r\n\r\n 1.5.1 Chip Resistors \r\n\r\n 1.5.2 Chip Capacitors \r\n\r\n 1.5.3 Surface-Mounted Inductors \r\n\r\n 1.6 Summary \r\n\r\n Chapter 2. Transmission Line Analysis \r\n\r\n 2.1 Why Transmission Line Theory? \r\n\r\n 2.2 Examples of Transmission Lines \r\n\r\n 2.2.1 two-Wire Lines \r\n\r\n 2.2.2 Coaxial Line \r\n\r\n 2.2.3 Micro strip Lines \r\n\r\n 2.3 Equivalent Circuit Representation \r\n\r\n 2.4 Theoretical Foundation \r\n\r\n 2.4.l Basic Laws \r\n\r\n 2.5 Circuit Parameters for a Parallel Plate Transmission Line \r\n\r\n 2.6 Summary of Different Line Configurations \r\n\r\n 2.7 General Transmission Line Equation \r\n\r\n 2.7.l Kirchhoff Voltage and Current Law Representations \r\n\r\n 2.7.2 Traveling Voltage and Current Waves \r\n\r\n 2.7.3 General Impedance Definition \r\n\r\n 2.7.4 Lossless Transmission Line Model \r\n\r\n 2.8 Microstrip Transmission Lines \r\n\r\n 2.9 Terminated Lossless Transmission Line \r\n\r\n 2.9.1 Voltage Reflection Coefficient \r\n\r\n 2.9.2 Propagation Constant and Phase Velocity \r\n\r\n 2.9.3 Standing Waves \r\n\r\n 2.10 Special Termination Conditions \r\n\r\n 2.10.1 Input Impedance of Terminated Lossless Line \r\n\r\n 2.10.2 Short Circuit Transmission Line \r\n\r\n 2.10.3 Open-Circuit Transmission Line \r\n\r\n 2.10.4 Quarter-Wave Transmission Line \r\n\r\n 2.11 Sourced and Loaded Transmission Line \r\n\r\n 2.11.1 Phasor Representation of Source \r\n\r\n 2.11.2 Power Considerations for a Transmission Line \r\n\r\n 2.11.3 Input Impedance Matching \r\n\r\n 2.11.4 Return Loss and Insertion Loss \r\n\r\n 2.12 Summary \r\n\r\n Chapter 3. The Smith Chart \r\n\r\n 3.1 From Reflection coefficient to Load Impedance \r\n\r\n 3.1.l Reflection Coefficient in Phasor Form \r\n\r\n 3.1.2 Normalized impedance Equation \r\n\r\n 3.1.3 Parametric Reflection Coefficient Equation \r\n\r\n 3.1.4 Graphical Representation \r\n\r\n 3.2 Impedance Transformation \r\n\r\n 3.2.1 Impedance Transformation for General Load \r\n\r\n 3.2.2 Standing We Ratio \r\n\r\n 3.2.3 Special Transform Hon Conditions \r\n\r\n 3.2.4 Computer Simulations \r\n\r\n 3.3 Admittance Transformation \r\n\r\n 3.3.1 Parenthetic Admittance Equation \r\n\r\n 3.3.2 Additional Graphical Displays \r\n\r\n 3.4 Parallel and Series Connections \r\n\r\n 3.4.1 Parallel Connection of R and L Elements \r\n\r\n 3.4.2 Parallel Connection of R and C Elements \r\n\r\n 3.4.3 Series Connection of R and L Elements \r\n\r\n 3.4.4 Series Connection of R and C Elements \r\n\r\n 3.4.5 Example of a T-Network \r\n\r\n 3.5 summary \r\n\r\n Chapter 4. Single- and Multiport Networks \r\n\r\n 4.1 Basic Definitions \r\n\r\n 4.2 Interconnecting Networks \r\n\r\n 4.2.1 Series Connection of Networks \r\n\r\n 4.2.2 Parallel Connection of Networks \r\n\r\n 4.2.3 Cascading Networks \r\n\r\n 4.2.4 Summary of ABCD Network Representations \r\n\r\n 4.3 Network Properties and Applications \r\n\r\n 4.3.1 Interrelations between Parameter Sets \r\n\r\n 4.3.2 Analysis of Microwave Amplifier \r\n\r\n 4.4 Scattering Parameters \r\n\r\n 4.4.1 Definition of Scattering Parameters \r\n\r\n 4.4.2 Meaning of S-Parameters \r\n\r\n 4.4.3 Chain Scattering Matrix \r\n\r\n 4.4.4 Conversion between Z and S-Parameters \r\n\r\n 4.4.5 Signal Flow Chart Modeling \r\n\r\n 4.4.6 Generalization of S-Parameters \r\n\r\n 4.4.7 Piratical Measurements of S-Parameters \r\n\r\n 4.5 Summary \r\n\r\n Chapter 5. An Overview of RF Filter Design \r\n\r\n 5.1 Basic Resonator and Filter Configurations \r\n\r\n 5.1.1 Filter types and Parameters \r\n\r\n 5.1.2 Low-Pass Filter \r\n\r\n 5.1.3 High-Pass Filter \r\n\r\n 5.1.4 Bandpass and Bandstop Filters \r\n\r\n 5.1.5 Insertion Loss \r\n\r\n 5.2 Special Filter Realizations \r\n\r\n 5.2.1 Butter Worth-Type Filters \r\n\r\n 5.2.2 Chebyshev-type Filters \r\n\r\n 5.2.3 Renormalization of Standard Low-Pass Design \r\n\r\n 5.3 Filter Implementation \r\n\r\n 5.3.1 Unit Elements \r\n\r\n 5.3.2 Kuroda's Identities \r\n\r\n 5.3.3 Examples of Microstrip Filter Design \r\n\r\n 5.4 Coupled Filter \r\n\r\n 5.4.1 Odd and Even Mode Excitation \r\n\r\n 5.4.2 Bandpass Filter Section \r\n\r\n 5.4.3 Cascading bandpass filter elements \r\n\r\n 5.4.4 Design Example \r\n\r\n 5.5 Summary \r\n\r\n Chapter 6. Active RF Components \r\n\r\n 6.1 Semiconductor Basics \r\n\r\n 6.1.1 Physical Properties of Semiconductors \r\n\r\n 6.1.2 PN-Junchon \r\n\r\n 6.1.3 Schottky Contact \r\n\r\n 6.2 RF Diodes \r\n\r\n 6.2.1 Schottk Diode \r\n\r\n 6.2.2 PIN Diode \r\n\r\n 6.2.3 Varactor Diode \r\n\r\n 6.2.4 IMPATT Diode \r\n\r\n 6.2.5 Tunnel Diode \r\n\r\n 6.2.6 TRAPATT BARITT, and Gunn Diodes \r\n\r\n 6.3 Bipolar-Junction Transistor \r\n\r\n 6.3.1 Construction \r\n\r\n 6.3.2 Functionality \r\n\r\n 6.3.3 Frequency Response \r\n\r\n 6.3.4 Temperature Behavior \r\n\r\n 6.3.5 Limiting Values \r\n\r\n 6.4 RF Field Effect Transistors \r\n\r\n 6.4.1 Construction \r\n\r\n 6.4.2 Functionality \r\n\r\n 6.4.3 Frequency Response \r\n\r\n 6.4.4 Limiting Values \r\n\r\n 6.5 High Electron Mobility Transistors \r\n\r\n 6.5.1 Construction \r\n\r\n 6.5.2 Functionality \r\n\r\n 6.5.3 Frequency Response \r\n\r\n 6.6 summary \r\n\r\n Chapter 7. Active RF Component Modeling \r\n\r\n 7.1 Diode Models \r\n\r\n 7.1.1 Nonlinear Diode Model \r\n\r\n 7.1.2 Linear Diode Model \r\n\r\n 7.2 Transistor Models \r\n\r\n 7.2.1 Large-Signal BJT Models \r\n\r\n 7.2.2 Small-Signal BJT Models \r\n\r\n 7.2.3 Large-Signal FET Models \r\n\r\n 7.2.4 Small-Signal FET Models \r\n\r\n 7.3 Measurement of Active Devices \r\n\r\n 7.3.l DC Characterization of Bipolar Transistor \r\n\r\n 7.3.2 Measurements of AC Parameters of Bipolar Transistor \r\n\r\n 7.3.3 Measurements of Field Effect 1YansistOr Parameter \r\n\r\n 7.4 Scattering Parameters Device Characterization \r\n\r\n 7.5 summary \r\n\r\n Chapter 8. Matching and Biasing Networks \r\n\r\n 8.l Impedance Matching Using Discrete Components \r\n\r\n 8.l.l Two-Component Matching Networks \r\n\r\n 8.1.2 Forbidden Regions, Frequency Response, and Quality Factor \r\n\r\n 8.1.3 T and Pi Matching Networks \r\n\r\n 8.2 Microstrip Line Matching Networks \r\n\r\n 8.2.l From Discrete Components to Microstrip Lines \r\n\r\n 8.2.2 Single-Stub Matching Networks \r\n\r\n 8.2.3 Double-Stub Matching Networks \r\n\r\n 8.3 Amplifier Classes of Operation and Biasing Networks \r\n\r\n 8.3.l Classes of Operation and Efficiency of Amplifiers \r\n\r\n 8.3.2 Bipolar Transistor Biasing Networks \r\n\r\n 8.3.3 Field Effect Transistor Biasing Networks \r\n\r\n 8.4 summary \r\n\r\n Chapter 9. RF Transistor Amplifier Designs \r\n\r\n 9.l Characteristics of Amplifiers \r\n\r\n 9.2 Amplifier Power Relations \r\n\r\n 9.2.l RF Source \r\n\r\n 9.2.2 Transducer Power Gain \r\n\r\n 9.2.3 Additional Power Relations \r\n\r\n 9.3 Stability Considerations \r\n\r\n 9.3.l Stability Circles \r\n\r\n 9.3.2 Unconditional Stability \r\n\r\n 9.3.3 Stabilization Methods \r\n\r\n 9.4 Constant Gain \r\n\r\n 9.4.1 Unilateral Design \r\n\r\n 9.4.2 Unilateral Figure of Merit \r\n\r\n 9.4.3 Bilateral Design \r\n\r\n 9.4.4 Operating and Available Power Gain Circles \r\n\r\n 9.5 Noise Figure Circles \r\n\r\n 9.6 Constant VSWR Circles \r\n\r\n 9.7 Broadband, High-Power, and Multistage Amplifiers \r\n\r\n 9.7.1 Broadband Amplifiers \r\n\r\n 9.7.2 High-Power Amplifiers \r\n\r\n 9.7.3 Multistage Amplifiers \r\n\r\n 9.8 Summary \r\n\r\n Chapter 10. Oscillators and Misers \r\n\r\n 10.1 Basic Oscillator Model \r\n\r\n 10.1.1 Negative Resistance Oscillator \r\n\r\n 10.1.2 Feedback Oscillator Design \r\n\r\n 10.1.3 Design Steps \r\n\r\n 10.1.4 Quartz Oscillators \r\n\r\n 10.2 High-Frequency Oscillator Configuration \r\n\r\n 10.2.1 Fixed-Frequency Oscillators \r\n\r\n 10.2.2 Dielectric Resonator Oscillators \r\n\r\n 10.2.3 YIG-Tuned Oscillator \r\n\r\n 10.2.4 Voltage-Controlled Oscillator \r\n\r\n 10.2.5 Gunn Element Oscillator \r\n\r\n 10.3 Basic Characteristics of Mixers \r\n\r\n 10.3.1 Basic Concepts \r\n\r\n 10.3.2 Frequency Domain Considering \r\n\r\n 10.3.3 Single-Ended Mixer Design \r\n\r\n 10.3.4 Single-Balanced Mixer \r\n\r\n 10.3.5 Double-Balanced Mixer \r\n\r\n 10.4 Summary \r\n\r\n Appendix A. Useful Physical Quantities and Units \r\n\r\n Appendix B. Skin Equation for a Cylindrical Conductor \r\n\r\n Appendix C. Complex Numbers \r\n\r\n C.1 Basic Definition \r\n\r\n C.2 Magnitude Computations \r\n\r\n C.3 Circle Equation \r\n\r\n Appendix D. Matrix Conversions \r\n\r\n Appendix E. Physical Parameters of Semiconductors \r\n\r\n Appendix E Long and Short Diode Models \r\n\r\n F.1 Long Diode \r\n\r\n F.2 Short Diode \r\n\r\n Appendix G. Couplers \r\n\r\n G.1 Wilkinson Divider \r\n\r\n G.2 Branch Line Coupler \r\n\r\n G.3 Lange Coupler \r\n\r\n Appendix H. Noise Analysis \r\n\r\n H.1 Basic Definitions \r\n\r\n H.2 Noisy Two-Port Networks \r\n\r\n H.3 Noise Figure for The Port Network \r\n\r\n H.4 Noise Figure for Cascaded Multiport Network \r\n\r\n Appendix I. Introduction to MATLAB \r\n\r\n I.1 Background \r\n\r\n I.2 Brief Example of Stability Evaluation \r\n\r\n I.3 Simulation Software on Compact Disk \r\n\r\n I.3.1 Overview \r\n\r\n I.3.2 Software Installation \r\n\r\n I.3.3 File Organization \r\n\r\n Index \r\n
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The field of high-frequency circuit design is receiving significant industrial attention due to a host of radio-boy (RF) and microwave (MW) applications. Improved semiconductor devices have mad possible a proliferation of high-speed digital and analog systems as observed in wireless communication, global positioning, RADAR, and related electrical and computer engineering disciplines. This interest has translated into a strong demand for engineers with comprehensive knowledge of high-frequency circuit design principles.
For the student, the professional engineer, and even the faculty member teaching this material there is, however a general Problem. The majority of exiting textbooks appear to target two separate audiences: A) the advanced gradate-level population with a broad theoretical background, and B) the technologists with little interest in mathematical and physical rigor As a result, RF circuit design has been Presented in two very different formats. For the advanced students the entry into this field is often pursued through an electromagnetic field approach, whi1e for the technologists the basic circuit aspect embedded in Kirchhoff's laws is the Preferred treatment. Both approaches make it difficult to adequately address the theatrical and practical issues surrounding high-frequency design principles. The basic circuit approach lacks, or only superficially covers, the wave nature of currents and voltages whose reflection and transmission properties constitute indispensable ingredients of the RF circuit behavior The electromagnetic field approach certainly covers the wave guide and transmission line aspect, but fails far short of reaching the important aspects of designing high-frequency amplifier, oscillator, and mixer circuits.
The objective of this textbook is to develop the RF circuit design aspects in such a way that the, need for transmission line principles is mad clear without adopting an electromagnetic field approach. Therefore, no EM background is necessary beyond a first year undergraduate physics course in fields and waves as provided by most colleges and universities. Students equipped with the knowledge of basic circuit theory and/or an exposure to microelectronics can use this book and cover the entire spectrum from the basic Principles of transmission and microstrip lines to the various high-frequency cir cult design procedures. Lengthy mathematical derivations are either relegated to the appendices or placed in examples, separated from the main text. This allows the omission of some of the dry theoretical details and thus focuses on the main concepts.
Accepting the challenge of providing a high degree of design experience, we have included many examples that discuss in considerable detail, in many cases extending over several pages, the Philosophy and the intricacies of the various design approaches.
This has caused some problems as well, specifically with respect to the circuit simulations. Obviously, we cannot expect the reader to have ready access to modem computer simulation tools such as MMICAD or ADS to name but two of the popular choices. Professional high-frequency simulation packages are generally expensive and require familiarity to use them effectively. For this reason we have created a considerable number of MATLAB M-files that the interested student can download from our website listed in Appendix G. Since MATLAB is a widely used relatively inexpensive mathematical tool, many examples discussed in this book can be executed and the results graphically displayed in a matter of seconds. Specifically the various Smith-Chart computations of the impedance transformations should appeal to the reader Nonetheless, all design examples, specifically the ones Presented in Chapters 8 to l0, have been independently simulated and verified in MMICAD for the linear circuit models, and ADS for the nonlinear oscillator and mixer models.
In terms of material coverage, this textbook purposely omitted the high-speed digital circuits as well as coding and modulation aspects. Although important, these topics would simply have required too many additional pages and would have moved the book too far away from its original intent of providing a fundamental, one- or two-semester, introduction to RF circuit design. At WPI this does not turn out to be a disadvantage, since most of the material can readily be acquired in available communication systems engineering courses.
The organization of this text is as follows: Chapter 1 presents a general explanation of why basic circuit theory breaks down as the operating frequency is increased to a level where the wavelength becomes comparable with the discrete circuit components. In Chapter 2 the transmission line theory is developed as a way to replace the low-frequency circuit models. Because of the voltage and current wave nature, Chapter 3 introduces the Smith Chart as a generic tool to deal with the impedance behavior on the basis of the reflection coefficient. Chapt6r 4 discusses two-Port networks with their flow-chart representations and how they can be described on the basis of the so-called scattering parameters. These network models and their scattering parameter descriptors are utilized in Chapter 5 to develop passive RF filter configurations.
Before covering active devices, Chapter 6 Provides a review of some of the key semiconductor fundamentals, followed by their circuit models representation in Chapter 7.
The impedance matching and biasing of bipolar and field effect transistors is taken up in Chapter 8 in an effort to eliminate potentially dangerous reflections and to provide optimal power flow. Chapter 9 focuses on a number of key high-frequency amplifier configurations and their design intricacies ranging from low noise to high power applications. Finally, Chapter 10 introduces the reader to nonlinear systems and their designs in oscillator and mixer circuits.
This book is used in the Electrical and Computer Engineering Department at WP as required text for the standard 7-week (5 lecture hours per week) course in RF circuit design (EE 3ll3, Introduction to RF Circuit Design). The course has primarily attracted an audience of 3rd and 4th year undergraduate students with a background in microelectronics. The course does not include a laboratory although six videotapes of piratical circuit performances conducted at Philips Semiconductors and in-class RF circuit measurements with a network analyzer are included. In addition, MMICAD and ADS simulations are incorporated as part of the regular lectures. Each chapter is fairly self-contained, with the goal of providing wide flexibility in organizing the course material. At WPI the content of approximately one three semester hour course is compressed into a 7-week period (consisting of a total Of 25--28 lectures). The topics covered are shown in the table below.
However, the entire course organization will always remain subject to change depending on total classroom time, student background, and interface requirements with related courses.
Please refer to the companion website at http: //www. prenhall. com/ludwig for more material including all of the art files in this text in pdf format.
ACKNOWLEDGEMENTS
The authors are grateful to a number of colleagues, students, and Practicing engineers. Prof. John Orr head of the ECE department, WPI, was instrumental in introducing this course and he provided the funding for the RF simulation packages. Our thanks go to Kome Vennema, Jarek Lucek, and Scott Blum of Philips Send conductors for providing technical expense, sponsoring senior student projects, and making available measurement equipment. Profs. John Sullivan, Jr., William Michalson, and Sergey Makarov assisted through extensive technical help. Linda Gu, Qiang Lai, Joe Plunkett, DL Funan Shi, Gene BogdanOv Minhua Liu, and Josh Resnik are current and former gradate students who provided much needed ambience and support in the EM and RF lab at WPI. R. L. is particularly thankful to Prof J. Thomas Vaughan of the University of Minnesota's MRI Center Who introduced him to the importance of transmission line principles in the design of RF coils for high-field magnetic resonance imaging. RB. would like to express his sincere thanks to MiAnail Shirokov of Lehigh University for helpful discussions on all aspects of RFM circuits and devices. The staff of Prentice-Hall, specifically Eric M, Tom Robbins, and Rose Kerman are thanked for their insight and support in making this book a reality.
Donation of the MIMICAD RF simulation design package by Optotek and a university license of ADS provided by Hewiett-Packard Corporation are gratefully acknowledged.